发光学报2025，Vol.46Issue(5)：794-812,19.DOI:10.37188/CJL.20240312
宽禁带半导体X射线探测器研究进展
Development of X-ray Detectors Based on Wide-bandgap Semiconductor
摘要
Abstract
High-performance semiconductor X-ray detectors prefer outstanding characteristics including low detec-tion of limit,low dark current,high sensitivity,fast response time,high radiation hardness and so on.Wide-band-gap semiconductors such as silicon carbide(SiC),gallium nitride(GaN),diamond,gallium oxide(Ga2O3),and zinc oxide(ZnO)exhibit exceptional properties,including a wide bandgap,high electron mobility,high breakdown field strength,high saturated carrier drift velocity,and large displacement energy.These characteristics enable them to demonstrate superior performance in X-ray detection,meeting the requirements for high-performance semiconduc-tor X-ray detectors and making them highly promising candidates for such applications.As a result,they have emerged as promising candidates for advanced X-ray detectors.In this paper,the electrical properties,preparation technology and detection performance of SiC,GaN,diamond,Ga2O3,ZnO X-ray detectors are introduced,and the latest research is discussed.Meanwhile,future research directions and potential applications of wide-bandgap semi-conductor X-ray detectors in medical imaging,industrial detection and space exploration conduct in-deep thinking.关键词
宽禁带/半导体/X射线探测器/碳化硅/氮化镓/金刚石Key words
wide-bandgap/semiconductor/X-ray detector/gallium nitride/silicon carbide/diamond分类
核科学引用本文复制引用
吴璇,高润龙,刘志宇,钟向丽,刘林月,欧阳晓平..宽禁带半导体X射线探测器研究进展[J].发光学报,2025,46(5):794-812,19.基金项目
国家重点基础研究发展规划项目(2021YFB3201000) （2021YFB3201000）
国家自然科学基金(12050005) Supported by the Major State Basic Research Development Program of China(2021YFB3201000) （12050005）
National Natural Science Foundation of China(12050005) （12050005）
