强激光与粒子束2025，Vol.37Issue(6)：111-116,6.DOI:10.11884/HPLPB202537.240412
本征光背入射的平面碳化硅光导开关响应特性
Response characteristics of intrinsic back-illuminated lateral silicon carbide photoconductive switches
摘要
Abstract
With the continuous development of photoconductive microwave technology towards high-frequency,high-power,long-life,and high-efficiency directions,lateral photoconductive devices have the potential to achieve high photoelectric gain and high main frequency response due to intrinsic light triggering and low parasitic capacitance.We investigated the photocurrent response of intrinsic light back-illuminated lateral silicon carbide(SiC)photoconductive switches.Based on semiconductor numerical simulation,the output photocurrent of the device under intrinsic light triggering with different substrate thicknesses and different light powers was compared for front and back illumination.The internal current and electric field distribution of the device were analyzed and compared.Finally,experimental tests were conducted on the front and back triggering of a 50 μm lateral SiC photoconductive switch.The experimental results show that under a 40 kW peak light power,the on-resistance of the back-triggered device is reduced by 40%compared to the front-triggered device,confirming the high photoelectric conversion efficiency of the back-illuminated device,and the internal electric field and current of the back-triggered device are more uniform,which is more conducive to improving the device's high-power capacity.The results provide simulation and experimental references for the intrinsic triggering of planar photoconductive switches.关键词
光导开关/碳化硅/背面光入射/平面型器件/半导体仿真Key words
photoconductive switch/silicon carbide/backside light illumination/planar-type device/semiconductor simulation分类
电子信息工程引用本文复制引用
卢柯润,刘福印,王日品,刘宇宸,王朗宁,荀涛..本征光背入射的平面碳化硅光导开关响应特性[J].强激光与粒子束,2025,37(6):111-116,6.基金项目
国家自然科学基金项目(62071477、62101577) （62071477、62101577）
