强激光与粒子束2025，Vol.37Issue(6)：122-129,8.DOI:10.11884/HPLPB202537.240426
掺铁β型氧化镓基垂直光导开关初步研制及高压寿命测试
Preliminary development and high-voltage lifetime testing of vertical photoconductive semiconductor switches based on Fe-doped β-Ga2O3
许坤 1陈志鹏 1林舟洋 1郑重 1孙倩 1王雨田 1彭博1
作者信息
- 1. 西安电子科技大学集成电路学部,西安 710071
- 折叠
摘要
Abstract
This study focuses on the performance of vertical photoconductive semiconductor switch(PCSS)based on Fe:β-Ga2O3 under high voltage.The results show that deep levels in Fe:β-Ga2O3 can provide carriers of non-intrinsic excitation.The device did not exhibit breakdown tendencies when subjected to a 20 kV input voltage with single-shot laser triggering.After more than 5000 trigger cycles at 15 kV by a 10 Hz laser,the switch eventually failed.Nevertheless,pulse performance remained stable throughout the effective data collection period,preliminarily demonstrating the potential of Ga2O3 PCSS for applications in extreme conditions such as high power and high frequency.Failure analysis indicates that a wide bandgap is not the sole determinant of high breakdown voltage.In addition to employing precise doping techniques to introduce specific defects and modify material properties,further improvements in existing material growth methods and device packaging structures can also contribute to enhancing the output and lifetime of PCSS.关键词
氧化镓/深能级/光导开关/可靠性/脉冲功率Key words
β-Ga2O3/deep level/PCSS/reliability/pulse power分类
电子信息工程引用本文复制引用
许坤,陈志鹏,林舟洋,郑重,孙倩,王雨田,彭博..掺铁β型氧化镓基垂直光导开关初步研制及高压寿命测试[J].强激光与粒子束,2025,37(6):122-129,8.
