物理学报2025，Vol.74Issue(10)：1-9,9.DOI:10.7498/aps.74.20241798
基于GaN的高增益微型光伏逆变器
New high-gain micro photovoltaic inverter based on GaN
摘要
Abstract
Microinverters have been widely used in distributed photovoltaic(PV)systems in recent years due to their modularity and flexibility.However,the current development of microinverter topologies faces significant challenges,such as low voltage gain and limited reliability.To solve these problems,an enhanced switched-inductor quasi-Z-Source inverter(ESL-qZSI)based on gallium nitride high electron mobility transistor(GaN HEMT)is proposed in this work.The proposed inverter introduces a novel topology that integrates an auxiliary boost unit with a switched-inductor quasi-Z-source network.This topology significantly enhances the voltage gain at low shoot-through duty ratios and reduces the voltage stress across the switching device.Additionally,the use of GaN HEMT as power switching components increases the switching frequency from the traditional 10 kHz to 100 kHz,in which a specialized negative turn-off gate driver circuit is designed to adapt the characteristics of the GaN HEMT and to ensure reliable switching operation.This increase in frequency reduces the size of passive components,such as inductors.Experimental results show that the proposed inverter achieves a boost factor of 5.75 at a shoot-through duty ratio of 0.2,which indicates that its performance is improved by 15％and 91％greater than the traditional switched-inductor-capacitor quasi-Z-source inverter(SLC-qZSI)and the traditional switched-inductor Z-source inverter(SL-ZSI),respectively.These results confirm that the proposed inverter enhances the voltage gain of existing topologies.Besides,compared with SLC-qZSI,the proposed inverter can obtain a higher efficiency of 90.5％,which shows the advantage of efficiency.In conclusion,the proposed ESL-qZSI with GaN HEMT provides a hopeful solution for high-efficiency and compact microinverter systems in photovoltaic applications.关键词
微型光伏逆变器/开关电感准Z源逆变器/GaN高电子迁移率晶体管Key words
micro photovoltaic inverter/switched-inductor quasi-Z-source inverter/GaN highelectron mobility transistor引用本文复制引用
林逸垒,杨翠,王新怀,毛维,葛崇志,于龙洋,张春福,张进成,郝跃..基于GaN的高增益微型光伏逆变器[J].物理学报,2025,74(10):1-9,9.基金项目
国家重点研发计划(批准号:2022YFB3604303,2022YFB3604300)和国家自然科学基金创新研究群体科学基金(批准号:62421005)资助的课题. Project supported by the National Key R&D Program of China(Grant Nos.2022YFB3604303,2022YFB3604300)and the Science Fund for Creative Research Groups of the National Natural Science Foundation of China(Grant No.62421005). （批准号:2022YFB3604303,2022YFB3604300）
