中国光学（中英文）2025，Vol.18Issue(3)：499-509,11.DOI:10.37188/CO.EN-2024-0027
渐变p型层AlGaN基紫外垂直腔面发射激光器光电性能的数值模拟
Numerical simulations on the photoelectric performance of AlGaN-based ultraviolet VCSELs with a slope-shaped p-type layer
摘要
Abstract
Owing to the low p-type doping efficiency in the hole injection layers(HILs)of GaN-based ultra-violet(UV)vertical-cavity surface-emitting laser(VCSEL),effective hole injection in multi-quantum wells(MQW)is not achieved,significantly limiting the photoelectric performance of UV VCSELs.We developed a slope-shaped HIL and an EBL structure in AlGaN-based UV VCSELs.In this study,by improving hole in-jection efficiency,the hole concentration in the HIL is increased,and the hole barrier at the electron barrier layer(EBL)/HIL interface is decreased.This minimises the hindering effect of hole injection.A mathematic-al model of this structure was established using a commercial software,photonic integrated circuit simulator in three-dimension(PICS3D).We conducted simulations and theoretical analyses of the band structure and carrier concentration.Introducing polarisation doping through the Al composition gradient in the HIL en-hanced the hole concentration,thereby improving the hole injection efficiency.Furthermore,modifying the EBL eliminated the abrupt potential barrier for holes at the HIL/EBL interface,smoothing the valence band.This improved the stimulated radiative recombination rate in the MQW,increasing the laser power.There-fore,the sloped p-type layer can enhance the optoelectronic performance of UV VCSELs.关键词
紫外VCSEL/AlGaN/极化掺杂/电子阻挡层/空穴注入效率Key words
UV VCSEL/AlGaN/polarisation doping/electron barrier layer(EBL)/hole injection efficiency分类
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文欣欣,贾伟,翟光美,董海亮,赵超,李天保,许并社..渐变p型层AlGaN基紫外垂直腔面发射激光器光电性能的数值模拟[J].中国光学（中英文）,2025,18(3):499-509,11.基金项目
山西省重点研发计划项目(No.202302150101001) （No.202302150101001）
山西浙大新材料与化工研究院科研项目(No.2021SX-AT002,No.2022SX-TD018) （No.2021SX-AT002,No.2022SX-TD018）
国家自然科学基金(No.21972103,No.61904120)Supported by the Key R & D Projects in Shanxi Province(No.202302150101001) （No.21972103,No.61904120）
Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(No.2021SX-AT002,No.2022SX-TD018) （No.2021SX-AT002,No.2022SX-TD018）
National Natural Science Foundation of China(No.21972103,No.61904120) （No.21972103,No.61904120）
