首页|期刊导航|Nano Research|Performance modification of two-dimensional organic field-effect transistors

Performance modification of two-dimensional organic field-effect transistors

Zhouyao Wang Fuguo Tian Peiyu Chen Tao Yu Jinfan Yang Xiangdong Xu Lianze Sun Zhihao Yu Yong Xu Zhongzhong Luo

Nano Research2025，Vol.18Issue(5)：P.556-575,20.

Nano Research2025，Vol.18Issue(5)：P.556-575,20.DOI:10.26599/NR.2025.94907343

Performance modification of two-dimensional organic field-effect transistors

Zhouyao Wang ¹Fuguo Tian ²Peiyu Chen ¹Tao Yu ¹Jinfan Yang ¹Xiangdong Xu ²Lianze Sun ¹Zhihao Yu ³Yong Xu ³Zhongzhong Luo⁴

作者信息

1. College of Electronic and Optical Engineering and College of Flexible Electronics(Future Technology),State Key Laboratory of Flexible Electronics,Nanjing University of Posts and Telecommunications(NJUPT),Nanjing 210023,China
2. Institute of Advanced Materials,Nanjing University of Posts and Telecommunications,Nanjing 210023,China
3. College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535,China
4. College of Electronic and Optical Engineering and College of Flexible Electronics(Future Technology),State Key Laboratory of Flexible Electronics,Nanjing University of Posts and Telecommunications(NJUPT),Nanjing 210023,China Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535,China
折叠

摘要

关键词

two-dimensional organic field-effect transistors/performance modification/mobility/contact resistance/dielectric

分类

信息技术与安全科学

引用本文复制引用

Zhouyao Wang,Fuguo Tian,Peiyu Chen,Tao Yu,Jinfan Yang,Xiangdong Xu,Lianze Sun,Zhihao Yu,Yong Xu,Zhongzhong Luo..Performance modification of two-dimensional organic field-effect transistors[J].Nano Research,2025,18(5):P.556-575,20.

基金项目

support from the National Key R&D Program of China(Nos.2024YFB4405300 and 2024YFB4405203) （Nos.2024YFB4405300 and 2024YFB4405203）

the Natural Science Foundation of Jiangsu Province(No.BK20220397) （No.BK20220397）

the National Natural Science Foundation of China(Nos.62204130,62474094,and T2322014) （Nos.62204130,62474094,and T2322014）

NSFC-DFG“Mobility”project(No.M0604) （No.M0604）

Guangdong Province Research and Development in Key Fields from Guangdong Greater Bay Area Institute of Integrated Circuit and System(No.2021B0101280002) （No.2021B0101280002）

Guangzhou City Research and Development Program in Key Field(No.20210302001) （No.20210302001）

in part by Guangdong Key Laboratory of Integrated Circuit Technology and Products Based on Fully Depleted Silicon On Insulator,the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province(No.22KJB510010) （No.22KJB510010）

Guangdong Provincial Key Laboratory of Integrated Circuit Technology and Products Based on Fully Depleted Silicon On Insulator(2024)(No.2024B1212020005) （2024）

Guangdong Province Pearl-River Talent Program(No.2023JC11X250). （No.2023JC11X250）

Nano Research

ISSN：1998-0124

访问量0

下载量0

段落导航