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Comprehensive performance analysis of CMOS and CNTFET based 8T SRAM cell

Mahamudul Hassan Fuad Md Faysal Nayan Sheikh Shahrier Noor Rahbaar Yeassin Russel Reza Mahmud

Journal of Electronic Science and Technology2025,Vol.23Issue(2):P.31-44,14.
Journal of Electronic Science and Technology2025,Vol.23Issue(2):P.31-44,14.DOI:10.1016/j.jnlest.2025.100306

Comprehensive performance analysis of CMOS and CNTFET based 8T SRAM cell

Mahamudul Hassan Fuad 1Md Faysal Nayan 2Sheikh Shahrier Noor 2Rahbaar Yeassin 2Russel Reza Mahmud2

作者信息

  • 1. Department of Electrical and Electronic Engineering,Dhaka International University,Dhaka,1212,Bangladesh Department of Electrical and Electronic Engineering,Ahsanullah University of Science and Technology,Dhaka,1208,Bangladesh
  • 2. Department of Electrical and Electronic Engineering,Ahsanullah University of Science and Technology,Dhaka,1208,Bangladesh
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摘要

关键词

Carbon nanotube field effect transistor(CNTFET)/Power delay product(PDP)/Static random access memory(SRAM)/Temperature/Tube position/Write/read delay

分类

信息技术与安全科学

引用本文复制引用

Mahamudul Hassan Fuad,Md Faysal Nayan,Sheikh Shahrier Noor,Rahbaar Yeassin,Russel Reza Mahmud..Comprehensive performance analysis of CMOS and CNTFET based 8T SRAM cell[J].Journal of Electronic Science and Technology,2025,23(2):P.31-44,14.

Journal of Electronic Science and Technology

1674-862X

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