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Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation

Youyang Qu Bing Zhao Weiyun Zhao Yuan Deng

National Science Open2025，Vol.4Issue(3)：P.63-72,10.

National Science Open2025，Vol.4Issue(3)：P.63-72,10.DOI:10.1360/nso/20250008

Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation

Youyang Qu ¹Bing Zhao ¹Weiyun Zhao ²Yuan Deng³

作者信息

1. School of Materials Science&Engineering,Beihang University,Beijing 100083,China
2. Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province,Hangzhou Innovation Institute of Beihang University,Hangzhou 310052,China
3. School of Materials Science&Engineering,Beihang University,Beijing 100083,China Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province,Hangzhou Innovation Institute of Beihang University,Hangzhou 310052,China
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摘要

关键词

thermoelectric/bismuth antimony telluride/magnetron sputtering/microstructure/electron-phonon transport

分类

通用工业技术

引用本文复制引用

Youyang Qu,Bing Zhao,Weiyun Zhao,Yuan Deng..Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation[J].National Science Open,2025,4(3):P.63-72,10.

基金项目

supported by the National Natural Science Foundation of China (52102202)。（52102202）

National Science Open

ISSN：2097-1168

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