电力系统保护与控制2025，Vol.53Issue(11)：181-187,7.DOI:10.19783/j.cnki.pspc.240709
GIS外壳绝缘隔断处的过电压分析与控制措施研究
Analysis of overvoltage and control measures at the insulation partition of GIS enclosures
摘要
Abstract
In-service gas-insulated switchgears(GIS)often experience arc discharge phenomena.Existing studies generally attribute this to the rise in enclosure ground potential caused by the very fast transient overvoltage(VFTO)generated during switching operations,without conducting in-depth theoretical analysis.This paper theoretically derives the mathematical expressions for the transient current and its rate of change during the switching of unloaded busbars in GIS,as well as formulas for calculating the transient voltage induced at the insulation partition of the GIS enclosure by the transient current.For GIS rated from 126 kV to 1100 kV,the rate of change of charging and discharging currents during switchgear switching can reach as high as 106 and 109 A/s,respectively.Such high rate of change in transient current can induce significant transient voltage at the insulation partition of the GIS enclosure.Multiple re-breakdowns between switch contacts during operation can induce secondary VFTO at the insulation partition,leading to air-gap breakdown and arc discharge.Finally,this paper briefly describes observed various arc discharge phenomena in the field and proposes an effective mitigation measure:reducing the loop area that includes the insulation partition of the enclosure can effectively lower secondary VFTO on both sides of the insulation partition,fundamentally eliminating arc discharge.关键词
绝缘隔断/弧光放电/电流时变率/感生的瞬变电压/次生的VFTOKey words
insulation partition/arc discharge/change rate of current/induced transient voltage/secondary VFTO引用本文复制引用
张书琴,张克选,骆常璐,高延峰,买小飞,陈怀亮,张垒,刘锋..GIS外壳绝缘隔断处的过电压分析与控制措施研究[J].电力系统保护与控制,2025,53(11):181-187,7.基金项目
This work is supported by the Science and Technology Project of State Grid Corporation of China(No.5500-201947427A-0-0-00). 国家电网公司科技项目资助(5500-201947427A-0-0-00) （No.5500-201947427A-0-0-00）
平高集团公司科技项目资助(PGKJ2022-054) （PGKJ2022-054）
