电子科技学刊2025，Vol.23Issue(2)：31-44,14.DOI:10.1016/j.jnlest.2025.100306
Comprehensive performance analysis of CMOS and CNTFET based 8T SRAM cell
Comprehensive performance analysis of CMOS and CNTFET based 8T SRAM cell
Mahamudul Hassan Fuad 1Md Faysal Nayan 2Sheikh Shahrier Noor 2Rahbaar Yeassin 2Russel Reza Mahmud2
作者信息
- 1. Department of Electrical and Electronic Engineering,Dhaka International University,Dhaka,1212,Bangladesh||Department of Electrical and Electronic Engineering,Ahsanullah University of Science and Technology,Dhaka,1208,Bangladesh
- 2. Department of Electrical and Electronic Engineering,Ahsanullah University of Science and Technology,Dhaka,1208,Bangladesh
- 折叠
摘要
关键词
Carbon nanotube field effect tran-/sistor(CNTFET)/Power delay product(PDP)/Static random access memory(SRAM)/Temperature/Tube position/Write/read delayKey words
Carbon nanotube field effect tran-/sistor(CNTFET)/Power delay product(PDP)/Static random access memory(SRAM)/Temperature/Tube position/Write/read delay引用本文复制引用
Mahamudul Hassan Fuad,Md Faysal Nayan,Sheikh Shahrier Noor,Rahbaar Yeassin,Russel Reza Mahmud..Comprehensive performance analysis of CMOS and CNTFET based 8T SRAM cell[J].电子科技学刊,2025,23(2):31-44,14.
