电瓷避雷器Issue(3)：67-74,8.DOI:10.16188/j.isa.1003-8337.2025.03.009
氧化铈掺杂对氧化锌压敏电阻性能的影响
Influence of CeO2 Doping on Properties of ZnO Varistors
摘要
Abstract
The influence of cerium oxide on the microstructure,crystallite size,electrical properties and degradation behavior of ZnO varistors after high current impulse test was investigated by doping different contents of cerium oxide in the material formula.The crystal phase composition of the ZnO varistors were tested by x-ray diffractometer.The results show that the sample with 0.11 t%doping exhibits great crystal grains distribution and excellent electrical properties.And its potential gradient increases from 327.8 V/mm to 349.4 V/mm.The nonlinear coefficient(α)and residual voltage ratio(U20kA/U1mA)are 60.8 and 2.408,respectively.It passes the simulation test of 20 kA(the electric current density is 6 170 A/mm2)pulse surge under 8/20 μs waveform for six times,and the change rate of varistor voltage is 12.97%with the impact of 8.6kA(the electric current density is2 650 A/cm2)current under8/20μs waveform for the tenth time,showing high electric potential gradient and large current capacity.关键词
氧化锌压敏电阻/掺杂/CeO2/晶粒尺寸/电学性能Key words
ZnO varistors/doping/CeO2/grain size/electrical properties引用本文复制引用
金鹿江,吴育聪,李强,陈志华,岑权进,曹秀华,胡春元,姚政,任鑫..氧化铈掺杂对氧化锌压敏电阻性能的影响[J].电瓷避雷器,2025,(3):67-74,8.基金项目
新型电子元器件关键材料与工艺国家重点实验室开发课题(编号:FHR-JS-202011019).Project supported Open Project of State Key Laboratory of Advanced Materials and Electronic Components(No.FHR-JS-202011019). （编号:FHR-JS-202011019）
