发光学报2025，Vol.46Issue(6)：1095-1108,14.DOI:10.37188/CJL.20250024
Lu2O3的位错与湿法刻蚀
Dislocation and Wet Etching of Lu2O3
摘要
Abstract
Lutetium oxide(Lu2O3)is recognized as a potential laser crystal material,and it is noted for its high ther-mal conductivity,low phonon energy,and strong crystal field.Nevertheless,its high melting point of 2 450℃induces significant temperature gradients,resulting in a proliferation of defects.The scarcity of comprehensive research on this crystal's defects hinders the enhancement of crystal quality.In this study,we employed the chemical etching method to examine the etching effects on Lu2O3 crystals under various conditions and to identify the optimal conditions for investi-gating the dislocation defects of Lu2O3 crystals(mass fraction 70%H3PO4,160℃,15-18 min).The morphologies of dislocation etch pits on the(111)-and(110)-oriented Lu2O3 wafers were characterized using microscopy,scanning electron microscopy and atomic force microscopy.This research addresses the gap in understanding Lu2O3 line defects and offers guidance for optimizing the crystal growth process and improving crystal quality.关键词
Lu2O3/腐蚀坑/位错/晶体缺陷Key words
Lu2O3/etch pit/dislocations/crystal defects分类
物理学引用本文复制引用
李国鑫,王佩,穆文祥,赵莉莉,王善朋,尹延如..Lu2O3的位错与湿法刻蚀[J].发光学报,2025,46(6):1095-1108,14.基金项目
国家重点研发计划(2021YFB3601403) （2021YFB3601403）
国家自然科学基金(62105181) （62105181）
山东省泰山学者项目(tsqn202306014) Supported by National Key Research and Development Program of China(2021YFB3601403) （tsqn202306014）
National Natural Science Foun-dation of China(62105181) （62105181）
Taishan Scholar of Shandong Province(tsqn202306014) （tsqn202306014）
