发光学报2025，Vol.46Issue(6)：1120-1128,9.DOI:10.37188/CJL.20250009
基于纳米压印的高分辨率和高效率量子点发光二极管
High-resolution and High-performance Quantum Dots Light-emitting Diode Based on Nanoimprint
摘要
Abstract
The current high-resolution quantum dot light-emitting doides(QLEDs)fabricated by various quantum dots patterning techniques suffer from low efficiency,mainly due to the passage of large leakage currents between pixels.To solve this issue,a honeycomb Poly(methyl methacrylate)(PMMA)film was fabricated by nanoimprint technique and ap-plied as a charge barrier layer in the QLED light emitting layer.The resulting red QLEDs with a resolution of 8 467 pixel per inch(PPI)were successfully fabricated.Due to the good insulating properties of PMMA,the charge barrier layer suc-cessfully isolates the electron transport layer and the hole transport layer.Therefore,the leakage current of our device is greatly reduced compared to the device without charge barrier layer patterning,and the external quantum efficiency(EQE)is greatly improved,with a maximum EQE of 15.31%and a maximum brightness of 100 274 cd/m2.关键词
量子点发光二极管(QLED)/纳米压印/高分辨率/电荷阻挡层Key words
quantum dot light-emitting doides(QLEDs)/nanoimprint/high-resolution/charge barrier layer分类
电子信息工程引用本文复制引用
黄兴云,谢潇婷,杨开宇,李福山..基于纳米压印的高分辨率和高效率量子点发光二极管[J].发光学报,2025,46(6):1120-1128,9.基金项目
国家重点研发计划(2022YFB3606500) （2022YFB3606500）
福建省光电信息科技创新实验室(2021ZZ126) （2021ZZ126）
福建省自然科学基金(2023J01257) Supported by National Key Research and Development Program of China(2022YFB3606500) （2023J01257）
Fujian Science&Technology In-novation Laboratory for Optoelectronic Information of China(2021ZZ126) （2021ZZ126）
Provincial Natural Science Foundation of Fujian(2023J01257) （2023J01257）
