人工晶体学报2025，Vol.54Issue(6)：924-934,11.DOI:10.16553/j.cnki.issn1000-985x.2024.0272
机器学习在分子束外延生长的应用进展
Research Progress on Application of Machine Learning in Molecular Beam Epitaxy Growth
摘要
Abstract
In recent years,artificial intelligence has been widely applied in the field of materials,and the application of machine learning in molecular beam epitaxy(MBE)has attracted attention.Intelligent recognition and feedback based on in-situ reflection high-energy electron diffraction(RHEED)and related material properties in MBE technology can significantly improve the quality and efficiency of material growth,leading to the realization of intelligent epitaxy of epitaxial films.This article focuses on the application of machine learning in MBE.It first introduces commonly used machine learning algorithm models in MBE,and explains the application of machine learning in optimizing growth conditions and specifically summarizes the research progress on machine learning based on RHEED images for different material systems(semiconductor thin films and quantum structure materials,oxide materials,and two-dimensional materials).A summary and outlook were provided on the existing problems and future development strategies.关键词
分子束外延/机器学习/反射高能电子衍射/Ⅲ-Ⅴ族半导体材料/人工智能Key words
molecular beam epitaxy/machine learning/reflection high-energy electron diffraction/Ⅲ-Ⅴ semiconductor material/artificial intelligence分类
物理学引用本文复制引用
杨再洪,周灿,范柳燕,张燕辉,陈泽中,陈平平..机器学习在分子束外延生长的应用进展[J].人工晶体学报,2025,54(6):924-934,11.基金项目
国家自然科学基金(12027805,11991060) （12027805,11991060）
中国科学院专项(GJ0090406) （GJ0090406）
