人工晶体学报2025，Vol.54Issue(6)：942-948,7.DOI:10.16553/j.cnki.issn1000-985x.2025.0027
钢缆直径对大尺寸直拉单晶硅生长稳定性的影响
Effect of Cable Diameter on Growth Stability of Large-Size Czochralski Silicon Crystals
摘要
Abstract
The development of the Czochralski(Cz)method for growing monocrystalline silicon has facilitated the production of larger crystals.Currently,in the repetitive Cz process,the weight of final crystal in a single furnace typically reaches 600～800 kg,exceeding the engineering load limit of pulling cable in established technologies.This paper reports stability issues arising from increasing the diameter of pulling cable during equipment upgrades,along with corresponding solutions.The study reveals that the increased rigidity of the thicker cable causes seed crystal tilting,which leads to ridge line deviation under low-load conditions and elevates the risk of neck fracture under high-load conditions.Through controlled variable experiments,this work confirms that the stability issues in crystal growth after cable thickening primarily stem from seed crystal tilting.Furthermore,numerical simulation methods were employed to analyze the stress distribution mechanisms induced by seed tilting.Ultimately,stability in crystal growth was successfully restored by adding counterweights.关键词
硅/提拉法/重复拉晶/籽晶/应力/晶体生长/提拉钢缆Key words
silicon/Czochralski/repetitive Czochralski/seed crystal/stress/crystal growth/pulling cable分类
数理科学引用本文复制引用
朱丽涛,杨德仁,刘磊,原帅,周声浪,张华利,汪晨,高宇,曹建伟,余学功..钢缆直径对大尺寸直拉单晶硅生长稳定性的影响[J].人工晶体学报,2025,54(6):942-948,7.基金项目
国家重点研发计划课题(2024YFB4204902) （2024YFB4204902）
浙江省"尖兵"科技计划项目(2024C01054) （2024C01054）
江苏省硅基电子材料重点实验室开放基金 （）
