人工晶体学报2025，Vol.54Issue(6)：949-959,11.DOI:10.16553/j.cnki.issn1000-985x.2024.0320
热屏影响下直拉法单晶硅生长能耗及传热路径研究
Power Consumption and Heat Transfer Paths in Czochralski Silicon Crystal Growth under the Influence of Heat Shield
摘要
Abstract
Silicon crystal,as the primary raw material for solar cells,plays a critical role in determining solar cells manufacturing costs.Consequently,reducing power consumption during monocrystalline silicon growth is pivotal for cost reduction and efficiency improvement in the photovoltaic industry.This study develops a global three-dimensional(3D)numerical model for the Czochralski(CZ)silicon growth,considering non-axisymmetric components such as heaters and electrodes in the CZ furnace.This modeling approach allows for more precise simulations of fluid flow and heat transfer in the CZ furnace.Based on the numerical model,the influence law of the emissivity of cold and hot side in heat shield on power consumption distribution and heat transfer paths of radiation,convection,and conduction in the CZ furnace was analyzed.The results indicate that reducing the emissivity on both cold and hot side significantly decreases power consumption,with a more pronounced effect observed on the cold side.In terms of radiative heat transfer,reducing the heat shield emissivity decreases the heat absorbed by the graphite crucible and the hot side of heat shield,as well as the heat releasing from the silicon melt and the cold side of heat shield.Furthermore,a slight increase in heat absorption by the top insulation is observed when the emissivity of the hot side is reduced.In terms of convective heat transfer,the reduction in cold side emissivity increases the heat absorbed by the water-cooling jacket,and the heat releasing from the cold side of heat shield.In contrast,the impact of hot side emissivity on convective heat transfer is comparatively minor.In terms of conductive heat transfer,lowering the emissivity on both sides of heat shield decreases heat conduction from the hot to cold side of heat shield,as well as from the graphite crucible to the quartz crucible,and from the quartz crucible to the silicon melt.These results provide critical theoretical insights for the precise and deep optimization of energy-saving strategies in industrial CZ furnaces.关键词
热屏/能耗/传热路径/直拉单晶硅/数值模拟Key words
heat shield/power consumption/heat transfer path/Czochralski silicon crystal/numerical simulation分类
数理科学引用本文复制引用
祁超,李登辇,李早阳,杨垚,钟泽琪,刘立军..热屏影响下直拉法单晶硅生长能耗及传热路径研究[J].人工晶体学报,2025,54(6):949-959,11.基金项目
国家重点研发计划课题(2023YFB4204601) （2023YFB4204601）
内蒙古自治区科技创新重大示范工程"揭榜挂帅"项目(2023JBGS0017,2024JBGS0004) （2023JBGS0017,2024JBGS0004）
宜宾市"揭榜挂帅"科技项目(2023JB005) （2023JB005）
