人工晶体学报2025，Vol.54Issue(6)：979-985,7.DOI:10.16553/j.cnki.issn1000-985x.2025.0013
MOCVD载气流量对GaN外延生长的影响
Effect of MOCVD Carrier Gas Flow Rate on GaN Epitaxial Growth
摘要
Abstract
The GaN thin film was grown on a 6-inch Si(111)substrate using a metal-organic chemical vapor deposition(MOCVD)system.The microstructure,surface morphology,and crystal quality of the GaN thin film were characterized by techniques such as spectroscopic ellipsometer,high-resolution X-ray diffraction,scanning electron microscopy,atomic force microscopy and transmission electron microscopy.The influence of variations in carrier gas flow rate during GaN growth on the uniformity and crystal quality of the film was investigated.The results indicate that as the H2 flow rate increases,the precursor reaches the substrate surface more rapidly,enhancing the surface reaction and consequently increasing the growth rate of GaN.However,excessively high H2 flow rates causes some of the mixed gases to participate in the GaN growth for insufficient time,leading to a saturation of the growth rate when the H2 flow rate reaches 39 slm(standard liter per minute).While increasing the H2 flow rate also enhances the migration rate of Ga atoms,further increases up to 48 slm do not yield a smoother surface.The AlGaN buffer layer exhibits a V-shaped pit structure,with most dislocations being bent,annihilated,and prevented from extending into the GaN layer.This results in a growth process resembling lateral overgrowth,which improves the crystal quality of the GaN to some extent.关键词
氮化镓/载气流量/Si(111)衬底/金属有机化学气相沉积/异质外延/薄膜Key words
GaN/carrier gas flow/Si(111)substrate/MOCVD/heteroepitaxy/thin film引用本文复制引用
李亚洲,马占红,姚威振,杨少延,刘祥林,李成明,王占国..MOCVD载气流量对GaN外延生长的影响[J].人工晶体学报,2025,54(6):979-985,7.基金项目
国家自然科学基金(62204239) （62204239）
宁夏自然科学基金(2024AAC05019) （2024AAC05019）
中央指导地方科技发展资金项目(2024FRD05005) （2024FRD05005）
