物理学进展2025，Vol.45Issue(3)：118-131,14.DOI:10.13725/j.cnki.pip.2025.03.002
超越硅基器件的二维晶体管:从理论到实验
Two-Dimensional Transistors beyond Silicon Counterparts:From Theory to Experiment
摘要
Abstract
Due to the severe short-channel effects,silicon-based transistors cannot work well when the gate length is shorter than 10 nm.Moore's law is at risk of failure.Compared to bulk semiconductor materials,two-dimensional(2D)materials own better electrostatic features and higher carrier mobilities.To describe the transport properties of transistors at the nanometer scale,the first-principles quantum transport simulation based on density functional theory coupled with non-equilibrium Green's function method is the most precise theoretical tool.The device performances of ideal 2D transistors are predicted to surpass those of silicon-based transistors based on the first-principles quantum transport simulation,which can meet the International Technology Roadmap for Semiconductors(ITRS)and International Roadmap for Device and Systems(IRDS)requirements for the next decade and extend Moore's law to sub-10 nm gate lengths[1].We review dramatic experimental breakthroughs on 2D transistors in the recent two years,including shrinking the gate length to the Angstrom scale,descending the electrode contact resistance to the quantum limit,and fabricating high-quality and ultrathin dielectric.When Ohmic contacts and high-quality ultrathin dielectric layers are simultaneously realized,theoretically predicted superior performances beyond silicon are observed in 10-nm-gate InSe transistors experimentally[2].关键词
二维晶体管/第一性原理量子输运模拟/从理论到实验/超越硅基Key words
2D transistor/first-principles quantum transport simulation/from theory to experiment/beyond silicon分类
物理学引用本文复制引用
李鸿,徐琳,邱晨光,吕劲..超越硅基器件的二维晶体管:从理论到实验[J].物理学进展,2025,45(3):118-131,14.基金项目
国家自然科学基金(No.12274002、91964101、61971009、6212200),国家科技支撑计划(No.2022YFA1203904、2021YFA0717400)和北京市自然科学基金(No.4212046)资助的课题. （No.12274002、91964101、61971009、6212200）
