新型炭材料（中英文）2025，Vol.40Issue(3)：678-687,10.DOI:10.1016/S1872-5805(25)60982-6
乙醇辅助直接合成晶圆级氮掺杂石墨烯用于Ⅲ族氮化物外延生长
Ethanol-assisted direct synthesis of wafer-scale nitrogen-doped graphene for Ⅲ-nitride epitaxial growth
摘要
Abstract
Among the synthesis techniques for graphene,chemical vapor deposition(CVD)enables the direct growth of graphene films on insulating substrates.Its advantages in-clude uniform coverage,high quality,scalability,and compat-ibility with industrial processes.Graphene is chemically inert and has a zero-bandgap which poses a problem for its use as a functional layer,and nitrogen doping has become an import-ant way to overcome this.Post-plasma treatment has been ex-plored for the synthesis of nitrogen-doped graphene,but the procedures are intricate and not suitable for large-scale pro-duction.We report the direct synthesis of nitrogen-doped graphene on a 4-inch sapphire wafer by ethanol-assisted CVD employing pyridine as the carbon feedstock,where the nitro-gen comes from the pyridine and the hydroxyl group in ethanol improves the quality of the graphene produced.Additionally,the types of nitrogen dopant produced and their effects on III-nitride epitaxy were also investigated,resulting in the successful illumination of LED devices.This work presents an effective synthesis strategy for the preparation of nitrogen-doped graphene,and provides a foundation for designing graphene functional layers in optoelectronic devices.关键词
Ⅲ族氮化物外延/直接合成/乙醇辅助CVD法/LED器件/氮掺杂石墨烯Key words
Ⅲ-nitride epitaxy/Direct synthesis/Ethanol-assisted CVD/LED devices/Nitrogen-doped graphene分类
化学化工引用本文复制引用
魏文泽,高翔,于朝杰,孙晓莉,魏同波,贾丽,孙靖宇..乙醇辅助直接合成晶圆级氮掺杂石墨烯用于Ⅲ族氮化物外延生长[J].新型炭材料（中英文）,2025,40(3):678-687,10.基金项目
WEI Wen-ze and GAO Xiang contributed equally to this work.This work was supported by the National Natural Science Foundation of China(T2188101). 国家自然科学基金(T2188101). （T2188101）
