表面技术2025，Vol.54Issue(12)：186-194,9.DOI:10.16490/j.cnki.issn.1001-3660.2025.12.017
整平剂JGB对局部电化学沉积铜微柱的影响
Effect of Leveler JGB on Copper Microcolumns Prepared by Localized Electrochemical Deposition
摘要
Abstract
In micro/nano manufacturing technology,localized electrochemical deposition(LECD)has significant advantages for metal micro-size additive manufacturing due to its non-thermal processing characteristic and precise micro/nano-scale control.The morphology,diameter,and deposition rate of metal microstructures produced by LECD have been extensively studied.The work aims to investigate the effect of Janus Green B(JGB)at various concentrations on the copper microcolumn prepared by LECD and further reveal the electromigration-electrolytic consumption mechanism of JGB,demonstrating how JGB levels the morphology,reduces the diameter,and changes the deposition rate. Based on the LECD technique and the short-circuit contact mode of microanode and cathode,copper microcolumns were deposited on the cathode substrate by controlling a three-dimensional movement platform.The morphology of the copper microcolumns was analyzed with scanning electron microscopy(SEM).Various diameters were measured with Measure software,and the deposition rates were calculated based on deposition time and height.In the LECD process,the leveling inhibition effect of JGB on copper microcolumn deposition depended on the concentration of JGB and the deposition voltage.At different deposition voltages,JGB accelerated the deposition of copper microcolumns at concentrations ranging from 6 mg/L to 12 mg/L(accelerating deposition),while it inhibited deposition of copper microcolumns at concentrations from 12 mg/L to 240 mg/L(inhibition deposition).The maximum deposition rate of copper microcolumns occurred at a JGB concentration of 12 mg/L.However,the leveling inhibition effect was observed during the inhibition deposition,and the ability of JGB to inhibit leveling increased with the increasing concentrations of JGB,as indicated by SEM images of the copper microcolumns.Additionally,the leveling inhibition effect of JGB was also enhanced with the increase of the deposition voltage.At a low voltage of 3.4 V,JGB had minimal effect on the morphology of copper microcolumns at concentrations ranging from 6 mg/L to 60 mg/L,with the diameters of copper microcolumns about 11 μm.The concentration of JGB that had the most significant effect on the morphology and diameter of the copper microcolumns was 240 mg/L,resulting in the smallest diameter of 7.41 μm among all copper microcolumns deposited at varying deposition voltages.However,the deposition rate at this concentration was relatively slow at 0.22 μm/s,leading to longer deposition time.In contrast,JGB effectively leveled the spores and branches of the copper microcolumns as the concentration of JGB increased from 6 mg/L to 60 mg/L.The optimal leveling inhibition concentration of JGB was found to be 60 mg/L at medium voltage(3.6 V),with deposition rates of 2.2 μm/s and 6.67 μm/s,respectively.Therefore,increasing the deposition voltage can enhance the leveling inhibition effect of JGB,reduce the required concentration of JGB,accelerate the deposition of copper microcolumns,and decrease the deposition time. Consequently,the concentration of JGB has a significant impact on the copper microcolumns prepared by LECD.The combined effects of the deposition voltage and JGB concentration demonstrate that JGB is highly effective in inhibiting and leveling copper microcolumns,providing valuable insights for the LECD manufacturing of metal microstructures.关键词
健那绿B/局部电化学沉积/铜微柱/形貌/整平抑制作用/机理Key words
Janus green B/LECD/copper microcolumn/morphology/leveling inhibition effect/mechanism分类
化学工程引用本文复制引用
吴国强,徐登国,卿启新,黄炎光,朱挺..整平剂JGB对局部电化学沉积铜微柱的影响[J].表面技术,2025,54(12):186-194,9.基金项目
国家自然科学基金(62363001) （62363001）
广西科技大学博士基金(22Z30)National Natural Science Foundation of China(62363001) （22Z30）
Doctoral Fund of Guangxi University of Science and Technology(22Z30) （22Z30）
