中国电机工程学报2025，Vol.45Issue(12)：4858-4869,中插28,13.DOI:10.13334/j.0258-8013.pcsee.241143
一种基于等效栅极电阻控制的SiC MOSFET结温波动抑制方法
A Method for Suppressing Junction Temperature Fluctuation of SiC MOSFET Based on Equivalent Gate Resistance Control
摘要
Abstract
The fundamental factor limiting the reliability of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)is junction temperature fluctuation under ransient operating conditions.The equivalent gate resistance control(EGRC)method proposed in this paper overcomes the difficulty of continuously modifying the drive resistance online.On this basis,an active thermal management(ATM)method is utilized to restrict temperature fluctuations by altering the switching loss,after which the regulatory range is defined.An inverter experimental platform is built to verify the correctness of the theoretical analysis.The experimental results show that the ATM method significantly reduces the temperature fluctuation at each power fluctuation stage.The maximum fluctuation range of 18.83℃is reduced to 9.85℃,and the lifetime of the SiC MOSFET is prolonged by 2.18 times.In addition,considering the efficiency factor of the system,the concepts of temperature control operating space(TCOS)and junction temperature control coefficient(JTCC)are proposed.Finally,the effectiveness of the method proposed in this paper is proved by experimental verification.关键词
碳化硅金属-氧化物半导体场效应晶体管/结温波动/主动热管理/等效栅极电阻控制/可靠性Key words
SiC metal-oxide-semiconductor field-effect transistor(MOSFET)/junction temperature fluctuation/active thermal management(ATM)/equivalent grid resistance control(EGRC)/reliability分类
动力与电气工程引用本文复制引用
王若隐,郑宏..一种基于等效栅极电阻控制的SiC MOSFET结温波动抑制方法[J].中国电机工程学报,2025,45(12):4858-4869,中插28,13.基金项目
国家自然科学基金项目(52077098). Project Supported by National Natural Science Foundation of China(52077098). （52077098）
