首页|期刊导航|半导体学报（英文版）|Facile construction of p-Si/n-SnO2 junction towards high performance self-powered UV photodetector
半导体学报（英文版）2025，Vol.46Issue(7)：88-96,9.DOI:10.1088/1674-4926/24090048
Facile construction of p-Si/n-SnO2 junction towards high performance self-powered UV photodetector
Facile construction of p-Si/n-SnO2 junction towards high performance self-powered UV photodetector
摘要
关键词
SnO2 microbelt/UV photodetector/CVD/self-poweredKey words
SnO2 microbelt/UV photodetector/CVD/self-powered引用本文复制引用
Xingyu Li,Li Tian,Jinshou Wang,Hui Liu..Facile construction of p-Si/n-SnO2 junction towards high performance self-powered UV photodetector[J].半导体学报（英文版）,2025,46(7):88-96,9.基金项目
Financial support for this research was provided by the High-Level Scientific Research Cultivation Project at Hubei Minzu University,with the grant identifier PY22001,and also by the Guiding Projects from the Department of Education in Hubei Province,identified by the grant number B2018088. （）
