电子器件2025，Vol.48Issue(3)：501-505,5.DOI:10.3969/j.issn.1005-9490.2025.03.005
铁电介质调控下的高线性GaN高电子迁移率晶体管设计
Design of High Linear GaN High Electron Mobility Transistor Controlled by Ferrodielectric
摘要
Abstract
The linearity of GaN based high electron mobility transfer(HEMT)transistors is optimized by introducing a ferroelectric film as gate dielectric.Due to the nonlinear polarization of the ferroelectric,the transconductance of the device with ferroelectric shows two peaks.The transconductance is widened and the linearity is improved as compared to conventional GaN HEMT.The electrical character-istics of GaN HEMT devices with different ferroelectric dielectric thickness,dielectric constant and Al components under the barrier lay-er are simulated and analyzed.According to the results,the peak transconductance of the device is broadened effectively,and the gate voltage swing of the device is increased by 1.5 times.This provides a guideline for the design of high-linearity GaN HEMT based on fer-rodielectric.关键词
铁电介质/跨导/AlGaN/GaN HEMTKey words
ferrodielectric/transconductance/AlGaN/GaN HEMT分类
能源科技引用本文复制引用
吴友军,陈丽香,刘世伟,桂玉,孙云飞..铁电介质调控下的高线性GaN高电子迁移率晶体管设计[J].电子器件,2025,48(3):501-505,5.基金项目
国家自然科学基金项目(62104167) （62104167）
江苏省自然科学基金项目(BK20210863,BK20221385) （BK20210863,BK20221385）
江苏省大学生创新创业训练计划项目(202310332013Z) （202310332013Z）
