集成电路与嵌入式系统2025，Vol.25Issue(7)：22-27,6.DOI:10.20193/j.ices2097-4191.2025.0017
FDSOI背栅光电晶体管的总电离剂量效应简约模型
Total ionizing dose compact model for FDSOI 1T pixel sensor
摘要
Abstract
This paper proposes a compact model of fully depleted silicon-on-insulator(FDSOI)based on single transistor pixel sensor(1T-PS)which is affected by total ionizing dose(TID)effects.This model takes into account the generation of fixed charges within the buried oxygen(BOX)layer and interface states at the surface below BOX.The corresponding relationship between irradiation dose and threshold voltage degradation of 1T-PS can be obtained through this model.By integrating the model into BSIM-IMG and executing the typical image input layer of an artificial neural network,the impact of the TID effects on the accuracy of 1T-PS arrays performing vector matrix multiplication(VMM)is studied.The test results indicate that after exposure to a total ionizing dose of 600 krad(Si),the rec-ognition accuracy decreases to approximately 85％.关键词
简约模型/总电离剂量效应/FDSOI/背栅光电晶体管/传感器内计算Key words
compact model/TID effects/FDSOI/1T pixel sensor/in-sensor computing分类
信息技术与安全科学引用本文复制引用
王一明,王一娇,吴佳瑶,邹涛..FDSOI背栅光电晶体管的总电离剂量效应简约模型[J].集成电路与嵌入式系统,2025,25(7):22-27,6.基金项目
国家自然科学基金(Grant T2293700,Grant T2293702,Grant T2293703) （Grant T2293700,Grant T2293702,Grant T2293703）
