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High-pressure research on optoelectronic materials:Insights from in situ characterization methods

Songhao Guo Yiqiang Zhan Xujie Lü

极端条件下的物质与辐射（英文）2025，Vol.10Issue(3)：10-23,14.

极端条件下的物质与辐射（英文）2025，Vol.10Issue(3)：10-23,14.DOI:10.1063/5.0258375

High-pressure research on optoelectronic materials:Insights from in situ characterization methods

Songhao Guo ¹Yiqiang Zhan ²Xujie Lü³

作者信息

2. Center of Micro-Nano Systems,School of Information Science and Technology,Fudan University,Shanghai 200433,China
3. Center for High Pressure Science and Technology Advanced Research(HPSTAR),Shanghai,China
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摘要

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Songhao Guo,Yiqiang Zhan,Xujie Lü..High-pressure research on optoelectronic materials:Insights from in situ characterization methods[J].极端条件下的物质与辐射（英文）,2025,10(3):10-23,14.

基金项目

This work was supported by the National Nature Science Foundation of China(NSFC)(Grant Nos.22275004,62274040,and 62304046),the Shanghai Science and Technology Commit-tee(Grant No.22JC1410300),the Shanghai Key Laboratory of Novel Extreme Condition Materials(Grant No.22dz2260800),the National Key Research and Development Program of China(Grant No.2022YFE0137400),and the Shanghai Science and Technology Innovationaction Plan(Grant No.24DZ3001200). （NSFC）

极端条件下的物质与辐射（英文）

ISSN：2468-2047

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