首页|期刊导航|半导体学报（英文版）|A 0.1-5.1 GHz high-gain LNA with inductorless composite resistor-capacitor feedback structure based on a 0.25 μm SiGe BiCMOS process
半导体学报（英文版）2025，Vol.46Issue(8)：36-44,9.DOI:10.1088/1674-4926/24110028
A 0.1-5.1 GHz high-gain LNA with inductorless composite resistor-capacitor feedback structure based on a 0.25 μm SiGe BiCMOS process
A 0.1-5.1 GHz high-gain LNA with inductorless composite resistor-capacitor feedback structure based on a 0.25 μm SiGe BiCMOS process
摘要
关键词
SiGe BiCMOS/low noise amplifier/wideband/inductorless/integrated circuitsKey words
SiGe BiCMOS/low noise amplifier/wideband/inductorless/integrated circuits引用本文复制引用
Zhouhao Zhao,Qian Chen,Yixing Lu,Haigang Feng..A 0.1-5.1 GHz high-gain LNA with inductorless composite resistor-capacitor feedback structure based on a 0.25 μm SiGe BiCMOS process[J].半导体学报（英文版）,2025,46(8):36-44,9.基金项目
This work is funded by the Science,Technology and Innovation Commission of Shenzhen Municipality(JCYJ20220818101001003).The authors would also appreci-ate Lorentz Solution for providing a great EM simulation tool"peakview"to analyze the performance of the devices. （JCYJ20220818101001003）
