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Downscaling challenges in IGZO transistors:A study on threshold voltage roll-up and roll-off effects

Jiye Li Mengran Liu Zhendong Jiang Yuqing Zhang Hua Xu Lei Wang Congwei Liao Shengdong Zhang Lei Lu

半导体学报（英文版）2025，Vol.46Issue(8)：45-52,8.

半导体学报（英文版）2025，Vol.46Issue(8)：45-52,8.DOI:10.1088/1674-4926/24120005

Downscaling challenges in IGZO transistors:A study on threshold voltage roll-up and roll-off effects

Jiye Li ¹Mengran Liu ²Zhendong Jiang ²Yuqing Zhang ²Hua Xu ³Lei Wang ³Congwei Liao ⁴Shengdong Zhang ¹Lei Lu²

作者信息

1. School of Electronic and Computer Engineering,Peking University,Shenzhen 518055,China||School of Integrated Circuits,Peking University,Beijing 100871,China
2. School of Electronic and Computer Engineering,Peking University,Shenzhen 518055,China
3. School of Materials Science and Engineering,South China University of Technology,Guangzhou 510275,China
4. College of Integrated Circuits and Optoelectronic Chips,Shenzhen Technology University,Shenzhen 518118,China
折叠

摘要

关键词

IGZO transistors/threshold voltage(Vth)/roll-off/roll-up/reverse short channel effect(RSCE)/short channel effect(SCE)

Key words

IGZO transistors/threshold voltage(Vth)/roll-off/roll-up/reverse short channel effect(RSCE)/short channel effect(SCE)

引用本文复制引用

Jiye Li,Mengran Liu,Zhendong Jiang,Yuqing Zhang,Hua Xu,Lei Wang,Congwei Liao,Shengdong Zhang,Lei Lu..Downscaling challenges in IGZO transistors:A study on threshold voltage roll-up and roll-off effects[J].半导体学报（英文版）,2025,46(8):45-52,8.

基金项目

This work was supported financially by National key Research and Development Program under Grant 2021YFB3600802 and Shenzhen Municipal Scientific Pro-gram under Grant KJZD20230923114111021. （）

半导体学报（英文版）

ISSN：1674-4926

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