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4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate

Jiafei Yao Yufeng Guo Zhengfei Yang Yuxuan Dai Ziwei Hu Man Li Kemeng Yang Jing Chen Maolin Zhang Jun Zhang

半导体学报（英文版）2025，Vol.46Issue(8)：59-67,9.

半导体学报（英文版）2025，Vol.46Issue(8)：59-67,9.DOI:10.1088/1674-4926/25010005

4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate

Jiafei Yao ¹Yufeng Guo ²Zhengfei Yang ¹Yuxuan Dai ¹Ziwei Hu ¹Man Li ²Kemeng Yang ²Jing Chen ²Maolin Zhang ²Jun Zhang²

作者信息

1. College of Integrated Circuit Science and Engineering(College of Industry-Education Integration),Nanjing University of Posts and Telecom-munications,Nanjing 210023,China||National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,Nanjing 210023,China||Nantong Institute of Nanjing University of Posts and Telecommunications,Nantong 226000,China
2. College of Integrated Circuit Science and Engineering(College of Industry-Education Integration),Nanjing University of Posts and Telecom-munications,Nanjing 210023,China||National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,Nanjing 210023,China
折叠

摘要

关键词

split gate/superjunction/high-K dielectric/4H-SiC/MOSFET

Key words

split gate/superjunction/high-K dielectric/4H-SiC/MOSFET

引用本文复制引用

Jiafei Yao,Yufeng Guo,Zhengfei Yang,Yuxuan Dai,Ziwei Hu,Man Li,Kemeng Yang,Jing Chen,Maolin Zhang,Jun Zhang..4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate[J].半导体学报（英文版）,2025,46(8):59-67,9.

基金项目

This work is supported by the National Natural Science Foundation of China(Grant Nos.62074080 and U23B2042),in part by the Natural Science Foundation of Jiangsu Province(Grant No.BK20211104),in part by the Jiangsu Provincial Key Research and Development Program(Grant No.BE2022126). （Grant Nos.62074080 and U23B2042）

半导体学报（英文版）

ISSN：1674-4926

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