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Effect of grain size on the resistivity of polycrystalline 3C-SiC

Guo Li Lei Ge Mingsheng Xu Jisheng Han Xiangang Xu

半导体学报（英文版）2025，Vol.46Issue(8)：68-74,7.

半导体学报（英文版）2025，Vol.46Issue(8)：68-74,7.DOI:10.1088/1674-4926/25020018

Effect of grain size on the resistivity of polycrystalline 3C-SiC

Guo Li ¹Lei Ge ¹Mingsheng Xu ¹Jisheng Han ¹Xiangang Xu¹

作者信息

1. Institute of Novel Semiconductor Materials and State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China
折叠

摘要

关键词

3C-SiC/polycrystalline/electrical properties/grain size

Key words

3C-SiC/polycrystalline/electrical properties/grain size

引用本文复制引用

Guo Li,Lei Ge,Mingsheng Xu,Jisheng Han,Xiangang Xu..Effect of grain size on the resistivity of polycrystalline 3C-SiC[J].半导体学报（英文版）,2025,46(8):68-74,7.

基金项目

This work was supported in part by the Major Science and Technology Innovation Project of Shandong Province under Grant 2022CXGC010103,Taishan Scholars Program of Shandong Province under Grant tstp20231210. （）

半导体学报（英文版）

ISSN：1674-4926

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