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Band alignment of SnO/β-Ga2O3 heterojunction and its electrical properties for power device application

Xia Wu Chenyang Huang Xiuxing Xu Jun Wang Xinwang Yao Yanfang Liu Xiujuan Wang Chunyan Wu Linbao Luo

半导体学报（英文版）2025，Vol.46Issue(8)：75-82,8.

半导体学报（英文版）2025，Vol.46Issue(8)：75-82,8.DOI:10.1088/1674-4926/25020008

Band alignment of SnO/β-Ga2O3 heterojunction and its electrical properties for power device application

Xia Wu ¹Chenyang Huang ¹Xiuxing Xu ¹Jun Wang ¹Xinwang Yao ¹Yanfang Liu ²Xiujuan Wang ¹Chunyan Wu ¹Linbao Luo¹

作者信息

1. Institute of Microelectronics,Hefei University of Technology,Hefei 230009,China
2. Institute of Instrumental Analysis Center,Hefei University of Technology,Hefei 230009,China
折叠

摘要

关键词

band alignment/heterojunction diode(HJD)/power semiconductor devices/β-gallium oxide(β-Ga2O3)

Key words

band alignment/heterojunction diode(HJD)/power semiconductor devices/β-gallium oxide(β-Ga2O3)

引用本文复制引用

Xia Wu,Chenyang Huang,Xiuxing Xu,Jun Wang,Xinwang Yao,Yanfang Liu,Xiujuan Wang,Chunyan Wu,Linbao Luo..Band alignment of SnO/β-Ga2O3 heterojunction and its electrical properties for power device application[J].半导体学报（英文版）,2025,46(8):75-82,8.

基金项目

This work was supported by the National Natural Sci-ence Foundation of China(NSFC,No.62074048),the Key Research and Development Plan of Anhui Province(No.2022f04020007),and the Natural Science Foundation of Anhui Province(No.2208085MF177). （NSFC,No.62074048）

半导体学报（英文版）

ISSN：1674-4926

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