东华大学学报（英文版）2025，Vol.42Issue(3)：242-250,9.DOI:10.19884/j.1672-5220.202403017
构建VOx/TiO2/n++Si的p-i-n结构提高钒氧化物基阻变存储器的可靠性和稳定性
Enhanced Reliability and Stability of Vanadium Oxide-Based RRAM by Constructing VOx/TiO2/n++Si p-i-n Structure
摘要
Abstract
Vanadium oxide(VOx)has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named Cu/VOx/TiO2/n++Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(＞200),a significantly high on/off ratio(＞102)and long-term stability.The tremendous improvement in the stability of the Cu/VOx/TiO2/n++Si device compared with the Cu/VOx/n++Si device is due to the p-i-n structure of VOx/TiO2/n++Si.The switching mechanism of the Cu/VOx/TiO2/n++Si device is attributed to the growth and annihilation of Cu conductive filaments.关键词
氧化钒/双极电阻开关/p-i-n结/阻变存储器/二氧化钛/双层结构Key words
vanadium oxide/bipolar resistive switching/p-i-n junction/resistive random-access memory(RRAM)/titanium dioxide/double-layer structure分类
信息技术与安全科学引用本文复制引用
王泽,周鑫,ASAD Khaleeq,王春瑞..构建VOx/TiO2/n++Si的p-i-n结构提高钒氧化物基阻变存储器的可靠性和稳定性[J].东华大学学报（英文版）,2025,42(3):242-250,9.基金项目
National Natural Science Foundation of China(No.61376017) （No.61376017）
