发光学报2025，Vol.46Issue(7)：1262-1270,9.DOI:10.37188/CJL.20250039
基于硫氰酸亚铜空穴注入层的量子点发光二极管的性能优化研究
Performance Optimization of Solution-processed QLEDs with CuSCN Hole Injection Layer
摘要
Abstract
Quantum dot light-emitting diodes(QLEDs)are promising for future display and lighting technologies due to their excellent optical properties and ease of fabrication.However,traditional hole injection materials like PEDOT:PSS limit QLED performance.This study explores copper thiocyanate(CuSCN)as the hole injection layer,paired with CdSe/ZnS green quantum dots and various hole transport layers(HTLs)such as PVK and Poly-TPD.We assessed the optoelectronic properties of these devices under both alternating current(AC)and direct current(DC)conditions.Our results reveal that the energy level barrier between CuSCN and PVK leads to charge trapping,which adversely affects performance.In contrast,Poly-TPD,with its higher hole mobility and shallower HOMO energy lev-el,alleviates charge trapping,significantly enhancing brightness and current efficiency to peak values of 132 075 cd/m2 and 15.6 cd/A,respectively.This research provides insights into the charge trapping mechanism at the CuSCN/HTL interface,highlighting CuSCN as a viable alternative to PEDOT:PSS for improving QLED efficiency.关键词
硫氰酸亚铜/量子点发光二极管/空穴注入层/束缚电荷/交流驱动Key words
copper thiocyanate(CuSCN)/quantum dot light-emitting diodes(QLEDs)/hole injection/trapped charge/alternating current分类
信息技术与安全科学引用本文复制引用
廖明月,何敏,陈平,张巧明,雷衍连..基于硫氰酸亚铜空穴注入层的量子点发光二极管的性能优化研究[J].发光学报,2025,46(7):1262-1270,9.基金项目
重庆市自然科学基金(CSTB2024NSCQ-QCXMX0056,2023NSCQ-MSX0888) （CSTB2024NSCQ-QCXMX0056,2023NSCQ-MSX0888）
重庆市留学回国人员创新支持计划(cx2024035)Supported by the Natural Science Foundation of Chongqing(CSTB2024NSCQ-QCXMX0056,2023NSCQ-MSX0888) （cx2024035）
the Venture and Innovation Support Program for Chongqing Overseas Returnees(cx2024035) （cx2024035）
