发光学报2025，Vol.46Issue(7)：1310-1316,7.DOI:10.37188/CJL.20250056
高亮度1060nm HiBBEE锥形半导体激光器
1060 nm High-brightness HiBBEE Tapered Semiconductor Laser
摘要
Abstract
To achieve high-brightness and low divergence angle output for a 1 060 nm semiconductor laser,a high-brightness vertical broad-area edge-emitting(HiBBEE)epitaxial wafer was utilized,and a HiBBEE tapered semiconductor laser was designed and successfully fabricated.A 7 μm narrow ridge waveguide is designed to achieve single-mode output and a 100 μm tapered waveguide section at the rear facet for power amplification.At a driving current of 1.5 A,the laser achieves a brightness of up to 25 MW·cm-2,sr-1.The device exhibits a vertical divergence angle of 8.0°due to the HiBBEE structure.This laser has significant applications in the eye-safety Li-dar application.关键词
锥形半导体激光器/垂直宽区边发射激光器/高亮度/光束质量Key words
tapered semiconductor laser/HiBBEE/high-brightness/beam quality分类
信息技术与安全科学引用本文复制引用
刘祥,BIMBERG Dieter,吴承坤,薛晓娥,MIAH Md Jarez,汪丽杰,宿家鑫,高翔,SANA Fatima,田思聪..高亮度1060nm HiBBEE锥形半导体激光器[J].发光学报,2025,46(7):1310-1316,7.基金项目
国家自然科学基金(62061136010,61774156,62174159) （62061136010,61774156,62174159）
中国科学院青年创新促进会(Y2022067) （Y2022067）
中德科学中心合作交流项目(M0386) （M0386）
吉林省科技发展计划项目(2023SYHZ0024,SKL202302028)Supported by National Natural Science Foundation of China(62061136010,61774156,62174159) （2023SYHZ0024,SKL202302028）
CAS Youth Innovation Promotion Association(Y2022067) （Y2022067）
Sino-German Center for Research Promotion(Joint Mobility Program of DFG and NSFC,M0386) （Joint Mobility Program of DFG and NSFC,M0386）
Jilin Provincial Scientific and Technological Development Program(2023SYHZ0024,SKL202302028) （2023SYHZ0024,SKL202302028）
