全球科技经济瞭望2025，Vol.40Issue(4)：63-76,14.DOI:10.3772/j.issn.1009-8623.2025.04.009
全球超宽禁带氧化镓半导体研发态势及启示
Research and Development Status and Enlightenment of Ultra-wide Band Gap Semiconductor Gallium Oxide
摘要
Abstract
From the perspective of technology research and development situation,relevant policies and patent layout,the technology development of global ultra-wide bandgap gallium oxide semiconductor industry and the three industrial chain of substrate-epitaxy-device are deeply analyzed,and the key technical problems that need to be solved for large-scale practical application of gallium oxide semiconductor are summarized.At the same time,a horizontal comparison of the research and development capabilities of gallium oxide semiconductors in major countries around the world was conducted,and the current gap between China and the United States and Japan was discovered.This led to inspirations such as providing key support for the research and development of gallium oxide substrate technology by low or free iridium,breaking through the bottleneck of halide vapor phase epitaxy technology,and conducting demonstration applications to promote the breakthrough development of the gallium oxide semiconductor industry.关键词
氧化镓/超宽禁带半导体/专利分析/衬底/外延/器件Key words
gallium oxid/ultra-wide bandgap semiconductor/patent analysis/substrate/epitaxy/device分类
信息技术与安全科学引用本文复制引用
李秾,于薇,蒲文华,孙慧娄..全球超宽禁带氧化镓半导体研发态势及启示[J].全球科技经济瞭望,2025,40(4):63-76,14.基金项目
中国科学技术信息研究所重点工作项目"重点科技领域前沿跟踪与深度研究"(ZD2023-08). （ZD2023-08）
