山西大学学报（自然科学版）2025，Vol.48Issue(4)：759-766,8.DOI:10.13451/j.sxu.ns.2024058
Pt薄膜衬底H堆叠WS2/WSe2层间激子的谷极化研究
Valley Polarization of Interlayer Excitons in a H-stacked WS2/WSe2 on Pt Film Substrate
摘要
Abstract
Two-dimensional transition metal dichalcogenides(TMDCs)can form periodic moiré superlattice,offering an invaluable platform for the investigation of electron correlation states and novel exciton states.Moiré interlayer excitons in TMDCs heterostruc-tures with type-Ⅱ band alignment exhibit spin-valley degrees of freedom that are manipulated not only by electrostatic field,strain,and substrate,but also by the modulation of moiré potential,facilitating the exploration of highly tunable valleytronic devices.In this paper,a H-stacked(60° twisted)tungsten disulfide/tungsten diselenide(WS2/WSe2)heterostructure was prepared on platinum(Pt)thin film substrate and silicon dioxide(SiO2)substrate,separately.By performing photoluminescence(PL)spectroscopy,photolumi-nescence excitation(PLE)spectroscopy and valley polarization measurements on both substrates at low temperatures,it was ob-served that,in the absence of significant charge doping,the interlayer excitons are more localized on the Pt substrate.Additionally,the valley polarization is more easily saturated with increasing exciton concentration on Pt substrate.Pt thin films,serving dual roles as metal contacts and artificially introduced defects,are shown to impact the valley polarization of the interlayer excitons.Our work provides insights for optoelectronics applications based on Moiré interlayer excitons.关键词
H堆叠WS2/WSe2/层间激子/光致发光光谱/谷极化Key words
H-stacked WS2/WSe2/interlayer excitons/photoluminescence spectroscopy/valley polarization分类
数理科学引用本文复制引用
王瑶瑶,贺金坤,裴沃野,张桐耀..Pt薄膜衬底H堆叠WS2/WSe2层间激子的谷极化研究[J].山西大学学报（自然科学版）,2025,48(4):759-766,8.基金项目
国家自然科学基金(12204287) （12204287）
