无机材料学报2025，Vol.40Issue(6)：667-674,8.DOI:10.15541/jim20240543
生长条件对BiFeO3纳米岛内自组装铁电拓扑畴形成的影响
Effects of Growth Conditions on the Formation of Self-assembly Grown Topological Domain in BiFeO3 Nanoislands
摘要
Abstract
Ferroelectric topological domain structures exhibit rich physical properties,displaying a wide range of application potential for next-generation nanoelectronic devices.The fundamental issue for the applications of topological devices lies in the precise design and control of ferroelectric topological domain states.Here,the effects of growth conditions on center-type quadrant topological domain configurations in BiFeO3(BFO)nanoislands formed through bending-induced bulges were investigated,which were generated by underlying electrode SrRuO3(SRO)nanoislands.The experimental results indicate that the formation of central-type topological domains is closely related to the growing conductions of SRO electrode nanoislands,nanoislands dimensions,temperature of BFO epitaxial growth,and BFO deposition thickness.When the lateral size of the electrode nanoislands ranges from 300 to 400 nm,the subsequently grown BFO thin film with nanoislands,and central-type four-quadrant topological domains can be induced by the underlying electrode protrusions.As the height of the electrode nanoislands gradually increases,the domain structure of the ferroelectric nanoislands changes from stripe domains of the thin film to central-type topological domains.However,at the diameter of electrode nanoisland exceeding 500 nm,the central domain transforms into a zigzag domain-wall configuration,demonstrating the important role of flexoelectric effects induced by morphological protrusions in the formation of topological domains.Within certain growth parameters(growth temperature in the range of 690-730℃and BFO thickness in the range of 30-60 nm),increasing the growth temperature facilitates formation of complete four-quadrant central-type topological domains,revealing synergistic interactions among defects,domain wall energy,and flexoelectric effects on the formation of central domain states.This central-type topological domain can also be switched by external field,and simultaneously induce switching between high/low conductive states,laying a foundation for the further construction of polarization topological electronic devices.关键词
铁酸铋/自组装/纳米岛阵列/中心型拓扑畴/挠曲电效应Key words
BiFeO3/self-assembly/nanoisland array/central-type topological domain/flexoelectric effect分类
数理科学引用本文复制引用
周厚霖,宋志庆,田国,高兴森..生长条件对BiFeO3纳米岛内自组装铁电拓扑畴形成的影响[J].无机材料学报,2025,40(6):667-674,8.基金项目
国家重点研发计划(2022YFB3807603) （2022YFB3807603）
国家自然科学基金重大研究计划重点项目(92163210) （92163210）
广东省自然科学基金(2024A1515011608)National Key R&D Program of China(2022YFB3807603) （2024A1515011608）
Major Research Plan of the National Natural Science Foundation of China(92163210) （92163210）
Guangdong Basic and Applied Basic Research Foundation(2024A1515011608) （2024A1515011608）
