无机材料学报2025，Vol.40Issue(6)：690-696,中插5-中插7,10.DOI:10.15541/jim20240480
Bi4Ti3O12铋层状压电陶瓷的A/B位掺杂及其电学性能
Electrical Properties of Bismuth Layered Piezoelectric Bi4Ti3O12 Ceramics with A/B-site Doping
摘要
Abstract
In recent years,there has been an urgent need for piezoelectric ceramic material capable of operating at temperatures of 450℃and above,which serves as a piezoelectric sensing element in high-temperature piezoelectric vibration sensors.Bi4Ti3O12(BIT)is a piezoelectric ceramic with a high Curie temperature(TC～650℃)within the family of bismuth-layered ferroelectric ceramics,making it a promising candidate for high-temperature applications.However,inherent low piezoelectric constant(d33)and low high-temperature resistivity of pure phase BIT ceramics limit their application in such environments.This work used solid-phase reaction method to prepare BIT-based piezoelectric ceramics with substitutions at A-site by Ce ions and at B-site by W/Ta/Sb ions(BCTWTaS-100x,x=0-0.04).Effect of Ce doping on the structure and electrical properties of BIT-based ceramics was studied.Introduction of Ce ions induces lattice distortion and modifies domain structure of BIT-based ceramics,thereby enhancing their piezoelectric properties(with a d33 of 37 pC/N at x=0.03).With doping concentration of ions increasing,relative displacement of oxygen atoms at apex of TiO6 octahedra increases,resulting in increased lattice distortion within BIT-based ceramic.Furthermore,BCTWTaS-3 ceramics demonstrate a high TC of 673℃and high-temperature resistivity maintaining on the order of 106 Ω·cm at 500℃.These ceramics also exhibit good thermal stability of d33.Notably,after depolarization at 600℃for 2 h,d33 can still maintain over 85％of its initial value.These finds indicate that BCTWTaS-100x ceramics have great potential for application in high-temperature environments exceeding 450℃.关键词
Bi4Ti3O12/高居里温度/压电陶瓷/晶格畸变Key words
Bi4Ti3O12/high Curie temperature/piezoelectric ceramic/lattice distortion分类
化学化工引用本文复制引用
张家维,陈宁,程原,王博,朱建国,金城..Bi4Ti3O12铋层状压电陶瓷的A/B位掺杂及其电学性能[J].无机材料学报,2025,40(6):690-696,中插5-中插7,10.基金项目
国家自然科学基金重点项目(51932010) （51932010）
四川省科技计划项目(2023YFG0042)Key Program of National Natural Science Foundation of China(51932010) （2023YFG0042）
Sichuan Science and Technology Program(2023YFG0042) （2023YFG0042）
