现代应用物理2025，Vol.16Issue(3)：115-120,6.DOI:10.12061/j.issn.2095-6223.202410016
高温下SOI FinFET器件总剂量效应研究
Total Dose Effects of SOI FinFET Devices at High Temperature
摘要
Abstract
The total dose effects of SOI FinFET at high temperature are studied and compared with the irradiation results at room temperature.The experimental results show that for P-type SOI FinFET devices,the change of electrical parameters caused by high-temperature irradiation is smaller than that caused by room temperature irradiation,indicating that the influence of high temperature and total dose effect on the electrical characteristics of the device is opposite.For N-type SOI FinFET devices,the degradation degree of electrical parameters after high-temperature irradiation is significantly greater than that at room temperature.Further analysis shows that the characteristic degradation caused by high-temperature total dose irradiation is not linear superposition between high temperature and total dose effect,there is a synergistic effect between them.Moreover,the smaller gate length of the device,the more significant the change of the electrical characteristics of the device caused by high temperature irradiation.关键词
SOI FinFET/温度/总剂量效应/协同效应/栅长依赖性Key words
SOI FinFET/temperature/total dose effects/synergistic effect/gate length dependence分类
数理科学引用本文复制引用
王子豪,刘景怡,袁乔枫,郝博为,安霞..高温下SOI FinFET器件总剂量效应研究[J].现代应用物理,2025,16(3):115-120,6.基金项目
国家重点研发计划资助项目(2022YFB4401704) （2022YFB4401704）
