现代应用物理2025，Vol.16Issue(3)：121-132,12.DOI:10.12061/j.issn.2095-6223.202409004
CMOS图像传感器瞬时剂量率效应模拟方法研究
Simulation Method for Transient Dose Rate Effect of CMOS Image Sensors
摘要
Abstract
The complementary metal oxide semiconductor(CMOS)image sensors have wide applications and promising prospects in radiation environments due to their high integration and good radiation resistance,and their radiation effects have received widespread attention.In this paper,the transient dose rate effects(TDRE)of CMOS image sensors,readout circuits,and column-level analog-to-digital converter(ADC)are investigated using a combination simulation method of Sentaurus technology computer aided design(TCAD)and simulation program with integrated circuit emphasis(SPICE).The simulation results show that for a single CMOS pixel,at the same integration time,the output signal linearly increases with the increase of the dose rate,and eventually tends to saturation.When TDRE occurs at different times,there would be significant differences in the output signal of CMOS pixels.For readout circuits and column-level ADC,when the dose rate is below 1×109 rad(Si)·s-1,their output signals are almost unaffected.When the dose rate reaches 1×1010 rad(Si)·s-1 and above,the sampled signals in the correlated double sampling(CDS)circuits of readout circuit are significantly reduced,and the ADC's output interruption and bit-flip error(BFE).For CMOS pixel arrays operating in the rolling shutter mode,TDRE can cause bright stripes of the output image.This work provides a simulation method for studying the TDRE of CMOS image sensors.关键词
CMOS图像传感器/瞬时剂量率效应/电路级仿真/TCAD仿真Key words
CMOS image sensor/transient dose rate effect/circuit-level simulation/TCAD simulation分类
信息技术与安全科学引用本文复制引用
彭治钢,伏琰军,韦源,左应红,牛胜利,朱金辉,李培,董志勇,贺朝会..CMOS图像传感器瞬时剂量率效应模拟方法研究[J].现代应用物理,2025,16(3):121-132,12.基金项目
国家自然科学基金资助项目(12105252,12005159) （12105252,12005159）
