现代应用物理2025，Vol.16Issue(3)：133-142,10.DOI:10.12061/j.issn.2095-6223.202409002
系统级封装的瞬时剂量率效应的PI-SI联合仿真
PI-SI Co-Simulation of Transient Dose Rate Effect in System-in-Package
摘要
Abstract
In this paper,a transient simulation approach for analyzing TDRE in SiPs based on a power distribution network(PDN)model is proposed.The SZ0501 SiP is adopted as a case study to validate the methodology.The proposed method is grounded in power distribution network PDN model and integrates power integrity and signal integrity(PI-SI)simulation methods it qualitatively evaluates the direct current(DC)voltage drop caused by latch-up currents and the transient power noise induced by transient photocurrents within the SiP's internal PDNs.Simulation results demonstrate that while latch-up currents result in negligible DC voltage drops,transient photocurrents significantly degrade power stability by introducing substantial power noise.Furthermore,a comparative analysis reveals that the independent PDNs in a PCB prototype exhibit better stability under TDREs than the shared PDNs within the SiP.Finally,the simulation results are used to analyze experimental data obtained from transient gamma irradiation tests conducted on both the SiP and its PCB prototype system.These findings contribute to a deeper understanding of the influence of PDN design with consideration of TDRE in electronic systems and provide a foundation for improving PDN robustness in future designs.关键词
系统级封装/瞬时剂量率效应/电源完整性/信号完整性/仿真分析Key words
system-in-package/transient dose rate effect/power integrity/signal integrity/simulation analysis分类
信息技术与安全科学引用本文复制引用
李忠良,卢溶,李洋,张秋光,张国和,温小梅,屈方园..系统级封装的瞬时剂量率效应的PI-SI联合仿真[J].现代应用物理,2025,16(3):133-142,10.基金项目
甘肃省科技重大专项计划资助项目(23ZDGE001) （23ZDGE001）
