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基于设计加固的抗辐射高速处理器件

郭阳 梁斌 池雅庆 陈建军

现代应用物理2025,Vol.16Issue(3):158-164,7.
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现代应用物理2025,Vol.16Issue(3):158-164,7.DOI:10.12061/j.issn.2095-6223.202409031

基于设计加固的抗辐射高速处理器件

Radiation-Hardened-by-Design High-Performance Microprocessor

郭阳 1梁斌 1池雅庆 1陈建军1

作者信息

  • 1. 国防科技大学计算机学院,长沙 410073
  • 折叠

摘要

Abstract

Radiation-hardened-by-design(RHBD)high-performance microprocessors serve as the com-putational foundation and core of real-time processing in spacecraft information systems,directly determining the system's performance and reliability under irradiation environments.Following a four-step approach of"theory-platform-product-test",this study elucidates the irradiation mechanism of silicon-based CMOS devices,constructs an irradiation effect model,and achieves breakthroughs in radiation-hardened design techniques at the transistor,circuit,and system levels for high-performance microprocessors.A radiation-hardened design technology platform for various manufacturing processes has been established,overcoming the challenges of precise ground testing and evaluation of the radiation resistance capabilities of high-performance microprocessors.Radiation-hardened high-performance microprocessors with computational performances ranging from one billion to five trillion operations have been developed and widely applied.

关键词

CMOS器件/辐照效应/设计加固/高速处理器件

Key words

CMOS devices/radiation effects/radiation-hardened-by-design(RHBD)/high-performance microprocessor

分类

信息技术与安全科学

引用本文复制引用

郭阳,梁斌,池雅庆,陈建军..基于设计加固的抗辐射高速处理器件[J].现代应用物理,2025,16(3):158-164,7.

基金项目

国家自然科学基金资助项目(62174180,62304258) (62174180,62304258)

现代应用物理

2095-6223

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