船电技术2025，Vol.45Issue(8)：35-38,4.
基于碳化硅MOSFET应用设计研究
Research on application design of silicon carbide MOSFET
摘要
Abstract
Aiming at the problems of turn-off overvoltage,oscillation and crosstalk in SiC MOSFET power devices at high switching speed,this paper explains the formation mechanism of turn-off overvoltage,oscillation and crosstalk by analyzing switching characteristics.Turn-off overvoltage and oscillation can be suppressed by reducing the switching speed,adjusting the gate drive resistance and reducing the stray inductance of the main circuit.Crosstalk can be suppressed by optimizing the drive circuit,such as designing decoupling circuit,Miller embedding circuit and adjusting drive voltage.In order to balance turn-off overvoltage and oscillation,crosstalk problem with low switching loss and high power density,it is pointed out that adjusting grid drive resistance and drive voltage in an appropriate range can effectively suppress the problem.The correctness and effectiveness of the method are verified by double pulse test.关键词
碳化硅MOSFET/开关特性/关断过压及震荡/串扰Key words
SiC MOSFET/switching characteristics/turn-off overvoltage and oscillation/crosstalk分类
信息技术与安全科学引用本文复制引用
杜立天,张之宇..基于碳化硅MOSFET应用设计研究[J].船电技术,2025,45(8):35-38,4.
