摘要
Abstract
CsPbBr3 crystal has emerged as a promising candidate material for next-generation semiconductor radiation detectors due to its high atomic number,excellent charge transport properties,and room-temperature operability.However,defects in the crystal(point defects,twins,and secondary phases)significantly degrade its performance.This review systematically analyzes the formation mechanisms of defects in CsPbBr3 and their impact on carrier transport,lattice polaron effects dominate intrinsic scattering while point defects(e.g.,Pb interstitials)introduce deep-level traps that enhance carrier recombination,ferroelastic domains(twins)induce carrier localization through interfacial potential barriers,and secondary phases(e.g.,CsPb2Br5)reduce mobility and resistivity via light scattering and incoherent interfaces.The study highlights differences in defect distribution between melt-and solution-grown crystals and proposes optimization strategies such as stoichiometric control,solvent engineering,and annealing.Although CsPbBr3 demonstrates X/γ-ray energy resolution comparable to commercial CdZnTe(e.g.,1.4％@662 keV),defect dynamics and ion migration hinder stability.Future research should focus on elucidating polaron-defect interactions,developing defect suppression techniques,and designing novel device architectures to advance its applications in nuclear medicine imaging and deep-space exploration.关键词
CsPbBr3晶体/缺陷调控/载流子寿命/极化子/铁弹畴/夹杂相Key words
CsPbBr3 crystal/defect engineering/carrier lifetime/polaron/ferroelastic domain/secondary phase分类
数理科学
