上海航天（中英文）2025，Vol.42Issue(4)：16-27,58,13.DOI:10.19328/j.cnki.2096-8655.2025.04.002
超宽禁带β-Ga2O3器件:航天电力电子高效革新与极端环境挑战的综述
Ultra-wide Bandgap β-Ga2O3 Devices:A Review of High-efficiency Innovations in Aerospace Power Electronics and Challenges in Extreme Environments
摘要
Abstract
The aerospace industry is at the forefront of significant technological advancements,as it adopts emerging solutions for power conversion based on ultra-wide bandgap semiconductor devices to meet the escalating demands for improved efficiency,reduced weight,and enhanced thermal performance in aerospace power electronics applications.On one hand,β-Ga2O3 has emerged as a promising candidate for high-efficiency,high-power-density power electronics applications,owing to its large bandgap and rapid development speed in semiconductor devices.On the other hand,the reliability evaluation and applications of β-Ga2O3 devices in extreme aerospace environments still face numerous unknowns and challenges.This paper thoroughly explores the pressing demand for ultra-wide bandgap semiconductor devices in aerospace power electronics,and offers an in-depth review of the global research progress on the radiation effects in gallium oxide power devices.It is believed that conducting comprehensive studies on radiation-induced defect targets and their associated signal transduction mechanisms within β-Ga2O3 material-device systems not only can advance a robust,closed-loop methodology for evaluating radiation reliability in ultra-wide bandgap compound semiconductors spanning from materials to devices,but also can establish a critical database linking radiation exposure conditions to quantitative device degradation metrics.Ultimately,this research provides pivotal insights for optimizing material growth,designing forward radiation-hardened power devices,and strengthening redundancy-based strategies for device-integrated power electronics systems.关键词
β-Ga2O3器件/缺陷/辐射/可靠性/航天电源Key words
β-Ga2O3 device/defect/radiation/reliability/aerospace power supply分类
信息技术与安全科学引用本文复制引用
李园,郝跃,赵元富,马晓华,郑雪峰,汤丹宁,蒋伟博,牛晨阳,李心悦..超宽禁带β-Ga2O3器件:航天电力电子高效革新与极端环境挑战的综述[J].上海航天（中英文）,2025,42(4):16-27,58,13.基金项目
国家自然科学基金青年资助项目(62204187) （62204187）
