上海航天（中英文）2025，Vol.42Issue(4)：75-80,6.DOI:10.19328/j.cnki.2096-8655.2025.04.008
双极器件中子/γ协同效应物理规律及机制研究
Research on Physical Laws and Mechanisms of Neutron/γ Synergistic Effects in Bipolar Devices
马武英 1丁李利 1李济芳 1潘琛 1闵亮亮1
作者信息
- 1. 西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室,陕西 西安 710024
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摘要
Abstract
To elucidate the physical mechanisms underlying the synergistic effects between the total γ dose and neutron displacement damage in bipolar process devices,in this paper,the experiments of neutron irradiation followed by γ-ray exposure and γ-ray exposure followed by neutron irradiation are conducted with the Xi'an pulsed reactor and the irradiation facility of 60Co,taking the bipolar circuits,transistors,and diodes as the experimental subjects.The experimental results demonstrate that,for bipolar process circuits,the damage induced by the neutron irradiation followed by γ-ray exposure is more severe than that caused by the γ-ray exposure followed by neutron irradiation.Tests with diodes and gate-controlled transistors are also carried out,which demonstrates that the interaction between the defects generated by the neutron/γ synergistic effects,or between the radiation and pre-existing defects,is relatively weak.This is mainly because the neutron irradiation facilitates the migration of hydrogen from the passivation layer into the oxide layer,which subsequently accelerates the generation of interface trap charges during the total dose irradiation.These findings provide significant insights for the radiation-hardened design of bipolar devices and the assessment of their performance in mixed radiation fields.关键词
双极器件/中子辐照/60Co γ辐照/辐射损伤Key words
bipolar device/neutron irradiation/60Co γ irradiation/radiation damage分类
信息技术与安全科学引用本文复制引用
马武英,丁李利,李济芳,潘琛,闵亮亮..双极器件中子/γ协同效应物理规律及机制研究[J].上海航天（中英文）,2025,42(4):75-80,6.
