上海航天（中英文）2025，Vol.42Issue(4)：81-88,8.DOI:10.19328/j.cnki.2096-8655.2025.04.009
β-Ga2O3肖特基势垒二极管中的单粒子烧毁机制分析
Analysis of Single-event Burnout Mechanism in β-Ga2O3 Schottky Barrier Diodes
摘要
Abstract
The single-event burnout(SEB)phenomenon in β-Ga2O3 Schottky barrier diode(SBD)under heavy ion and high-energy proton irradiation conditions is systematically investigated.The results demonstrate that the reverse bias voltage is a crucial factor influencing the failure of β-Ga2O3 SBDs.SEB occurs only when the reverse bias voltage reaches a specific critical value,and the higher the reverse bias voltage,the shorter the time to failure.Through the technology computer aided design(TCAD)simulations and scanning electron microscopy(SEM)analysis,the mechanisms behind SEB are further elucidated,showing that the accumulation of high electric fields and the electron-hole pairs induced by the irradiation are the primary causes of SEB.The thermal effects and enhanced electric field induced by high-energy proton and heavy ion irradiation lead to localized overheating in the device,which in turn triggers the occurrence of SEB.This research provides theoretical insights and engineering references for optimizing the design of β-Ga2O3 devices and improving their radiation hardness,which is crucial for applications in high-radiation environments.关键词
β-Ga2O3功率器件/肖特基势垒二极管(SBD)/Kr离子/高能质子/反向偏压Key words
β-Ga2O3 power device/Schottky barrier diode(SBD)/Kr ion/high-energy proton/reverse bias voltage分类
信息技术与安全科学引用本文复制引用
李幸,马腾,钟思檑,彭超,张鸿,张战刚,雷志锋..β-Ga2O3肖特基势垒二极管中的单粒子烧毁机制分析[J].上海航天（中英文）,2025,42(4):81-88,8.基金项目
广东省基础与应用基础研究基金资助项目(2022A151511049) （2022A151511049）
国家自然科学基金资助项目(12305299) （12305299）
新疆维吾尔自治区2023年"天池英才计划"资助项目(2024-000057) （2024-000057）
宽禁带半导体材料与器件国家重点实验室开放基金资助项目(2413S101) （2413S101）
