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Principle and Implementation of Temperature-adaptive Active Gate Driver for SiC MOSFET Module

Menghao Li Hao Li Jie Ren Sideng Hu Xiangning He

Chinese Journal of Electrical Engineering2025，Vol.11Issue(2)：P.216-225,10.

Chinese Journal of Electrical Engineering2025，Vol.11Issue(2)：P.216-225,10.DOI:10.23919/CJEE.2025.000140

Principle and Implementation of Temperature-adaptive Active Gate Driver for SiC MOSFET Module

Menghao Li ¹Hao Li ²Jie Ren ¹Sideng Hu ¹Xiangning He¹

作者信息

1. College of Electrical Engineering,Zhejiang University,Hangzhou 310000,China
2. Fourth Research Department,CSIC No.705 Research Institute,Kunming 650000,China
折叠

摘要

关键词

SiC MOSFET/active gate driver/temperature sensitive parameters/online junction temperature monitoring

分类

信息技术与安全科学

引用本文复制引用

Menghao Li,Hao Li,Jie Ren,Sideng Hu,Xiangning He..Principle and Implementation of Temperature-adaptive Active Gate Driver for SiC MOSFET Module[J].Chinese Journal of Electrical Engineering,2025,11(2):P.216-225,10.

基金项目

Supported by the National Natural Science Foundation of China (52177199). （52177199）

Chinese Journal of Electrical Engineering

ISSN：2096-1529

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