材料工程2025，Vol.53Issue(8)：185-192,8.DOI:10.11868/j.issn.1001-4381.2023.000441
氧化石墨烯在碳化硅电化学机械抛光中的作用机制及工艺
Mechanism of action and process for graphene oxide in electrochemical mechanical polishing of silicon carbide
摘要
Abstract
Electrochemical mechanical polishing(ECMP)technology is a new technology that can rapidly improve the efficiency of flattening silicon carbide(SiC).Based on the complexity of formulating the polishing solution and the inability to combine efficient material removal and high surface quality at the same time,this paper develops a simple and environmentally friendly composition based on graphene oxide(GO)as a solid lubricant and a diamond suspension.A new SiC-ECMP polishing solution is developed.The new polishing solution is used to polish SiC with a smooth surface roughness of Ra 0.324 nm while maintaining a material removal rate of 2.38 μm/h.Macroscopic sedimentation experiments,zeta potential and particle size analysis experiments,and TEM analysis are performed to analyse the improvement of the stability of the polishing solution by GO,and the lubrication mechanism is revealed by contact angle,and friction and wear experiments.The results show that the addition of GO to the polishing solution inhibits the precipitation of abrasive,the particle size of the polishing solution becomes smaller and more uniformly distributed,and the stability of the slurry is improved;it reduces the contact angle between the polishing solution and the SiC surface and lowers the surface friction,which achieves the effect of wear reduction and lubrication.关键词
碳化硅/电化学机械抛光/润滑/氧化石墨烯Key words
silicon carbide/electrochemical mechanical polishing/lubrication/graphene oxide分类
信息技术与安全科学引用本文复制引用
彭超,任荣浩,王子睿,王永光,黄冬梅,朱睿,成锋..氧化石墨烯在碳化硅电化学机械抛光中的作用机制及工艺[J].材料工程,2025,53(8):185-192,8.基金项目
江苏省研究生科研与实践创新计划项目(KYCX23_3236) （KYCX23_3236）
国家自然科学基金资助项目(52375458) （52375458）
中国博士后科学基金资助项目(2015M571800) （2015M571800）
