电工技术学报2025，Vol.40Issue(16)：5044-5067,24.DOI:10.19595/j.cnki.1000-6753.tces.241174
高压大功率IGBT短路失效机理及保护技术研究综述
A Review of Short-Circuit Failure Mechanism and Protection Technology of High-Voltage and High-Power IGBT Device
摘要
Abstract
High-voltage,high-power insulated gate bipolar transistor(IGBT)is the core device in the flexible HVDC transmission project.During its operation,a short-circuit fault can threaten the safe and reliable operation of the converter equipment and even the transmission system.Therefore,it is of great significance to study the short-circuit failure simulation and short-circuit protection methods to improve the IGBT's short-circuit robustness and system stability. According to the location of the short-circuit fault and the operating state of IGBT,typical short-circuit faults can be classified into three categories.Regarding the bridge arm current's direction and the modular multilevel converter's submodule operating statusbefore the short circuit,the direct short-circuit faults of the submodules are classified into four categories. To understand the short-circuit characteristics of IGBT under different types of short-circuit faults and reveal the mechanism of short-circuit failure,it is necessary to build a short-circuit experimental platform and carry out targeted short-circuit fault simulations.Therefore,short-circuit fault simulation circuits for different types of short-circuit faults are summarized and analyzed,and their operating principles are introduced in detail. Subsequently,the short-circuit failure modes and mechanisms of IGBT are systematically sorted out from chip and package levels.The short-circuit failure modes are divided into peak current failure,gate oscillation failure,self-turn-off failure,short-circuit pulse failure,intrinsic thermal breakdown failure,short-circuit turn-off failure,and blocking thermal breakdown failure at the chip level.Packaging failures at the packaging level are bonding wire failures,solder layer failures,etc.The effects of gate voltage,ambient temperature,and parasitic inductance of short-circuit circuits on short-circuit failure are explored. The short-circuit detection techniques for IGBT include desaturation detection,parasitic inductance detection,gate voltage detection,and gate charge detection.The technology and its application characteristics are analyzed,and the applicability and effectiveness of each detection technique in different application scenarios are discussed.Appropriate short-circuit protection turn-off technology must be adopted to reduce the stress on the device during the turn-off process.Two main stream short-circuit protection technologies,soft turn-off and active clamp,are discussed. The research on the short-circuit failure mechanism and protection technology of IGBT is the main trend to increase the short-circuit robustness and system stability.There are still many problems.Research hotspots in the future will focus on(1)short-circuit fault simulation method for multi-scenario applications,(2)the relationship between external factors and short-circuit failure mode,(3)intelligent short-circuit detection and protection technology,(4)anti-short circuit capability improvement method.关键词
绝缘栅双极型晶体管(IGBT)/短路故障/失效机理/短路保护Key words
Insulated gate bipolar transistor(IGBT)/short-circuit fault/failure mechanism/short-circuit protection分类
信息技术与安全科学引用本文复制引用
冯甘雨,李学宝,陶琛,孙鹏,赵志斌,陈兵..高压大功率IGBT短路失效机理及保护技术研究综述[J].电工技术学报,2025,40(16):5044-5067,24.基金项目
国家电网有限公司总部管理科技资助项目(LCC-VSC混联换流站非同类阀系统复杂电磁特性及可靠性提升技术研究,5500-202318521A-3-2-ZN). （LCC-VSC混联换流站非同类阀系统复杂电磁特性及可靠性提升技术研究,5500-202318521A-3-2-ZN）
