人工晶体学报2025，Vol.54Issue(8)：1403-1409,7.DOI:10.16553/j.cnki.issn1000-985x.2025.0124
硒添加量对硒化镉单晶电学和光学性能的影响研究
Impact of Selenium Addition on Electrical and Optical Properties of CdSe Single Crystal
窦瑛 1王英民 1高彦昭 1程红娟1
作者信息
- 1. 中国电子科技集团公司第四十六研究所,新型半导体晶体材料技术重点实验室,天津 300220
- 折叠
摘要
Abstract
In this paper,CdSe single crystals were grown by high-pressure Bridgman method with a seed.The properties of a series of Se-added single crystal CdSe were studied.The results show that the added selenium atom fills the selenium vacancies(VSe),which reduced Cd/Se mass ratio,and the position of Raman peak of the CdSe single crystals are not affected.Furthermore,electrical properties,optical properties and inclusion of Se-added CdSe single crystal were analyzed.The results indicate that after the selenium fills the VSe,the free carrier concentration in CdSe single crystals reduces,the resistivity increases,the free carrier absorption of infrared photons is weakened,the structural stability of CdSe single crystals is improved,and the inclusion density reduces.The synergistic effect of these two factors improves the electrical and optical properties of CdSe single crystals.The resistivity increases to more than 108 Ω·cm,and the infrared(IR)transmittance in 8～12 µm reaches to 69%.The research provides reference significance for the application of CdSe in long-wave IR solid-state lasers and other fields.关键词
CdSe单晶/添加Se/电阻率/红外透过率/夹杂相密度/电学性能/光学性能Key words
CdSe single crystal/selenium addition/resistivity/IR transmittance/inclusion density/electrical property/optical property分类
化学化工引用本文复制引用
窦瑛,王英民,高彦昭,程红娟..硒添加量对硒化镉单晶电学和光学性能的影响研究[J].人工晶体学报,2025,54(8):1403-1409,7.
